BC818-16 BC818-25 BC818-40 features z for general af applications z high collector current z high current gain z low collector-emitter saturation voltage maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.5 a p c collector power dissipation 0.3 w tj junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v cbo i c = 10 a, i e =0 30 v collector-emitter breakdown voltage v ceo i c = 10ma, i b =0 25 v emitter-base breakdown voltage v ebo i e = 10 a, i c =0 5 v collector cut-off current i cbo v cb = 25 v , i e =0 0.1 a emitter cut-off current i ebo v eb = 4v, i c =0 0.1 a h fe(1) v ce = 1v, i c = 100ma 100 630 dc current gain h fe(2) v ce = 1v, i c = 300ma 60 collector-emitter saturation voltage v ce (sat) i c = 500ma, i b = 50ma 0.7 v base-emitter saturation voltage v be (sat) i c = 500ma, i b = 50ma 1.2 v base-emitter voltage v be v ce =1v, i c = 500ma 1.2 v collecter capactiance c ob v cb =10v ,f=1mhz 6 pf transition frequency f t v ce = 5 v, i c = 50ma f=100mhz 170 mhz classification of h fe (1) rank BC818-16 BC818-25 BC818-40 range 100-250 160-400 250-630 marking 6e 6f 6g so t -23 1. base 2. emitter 3. collector BC818 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics BC818 2 date:2011/05 www.htsemi.com semiconductor jinyu
|
